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PRELIMINARY
Optoelectronics
Preliminary Data Sheet
C30659-900-1060-1550nm Series
Silicon and InGaAs APD Preamplifier Modules
Applications
Range Finding Confocal Microscope LIDAR
DATASHEET
Featur es
System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power (NEP) Spectral response range: Silicon APD: 400 to 1100nm InGaAs APD: 1100 to 1700nm Power consumption (150 mW typ.) +/-5 Volts amplifier operating voltages 50 AC Load capability
Description
PerkinElmer C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817E, C30902E, C30954E, C30956E, C30645E and C30662E that provide very good response between 830 and 1550 nanometers and very fast rise and fall times at all wavelengths. The preamplifier section uses a very low noise GaAs FET front end designed to operate at higher transimpedance than the regular C30950 series. The C30659 is pin to pin compatible with the C30950 series. The output of the C30659 is negative. An emitter follower is used as an output buffer stage. To obtain the wideband characteristics, the output of these devices should be AC (capacitively) coupled to a 50 Ohm termination. The module must not be DC coupled to loads of less than 2,000 Ohms. For field use, it is recommended that a temperature compensated HV supply be employed to maintain responsivity constant over temperature.
Hermetically sealed TO-8 packages High reliability Fast overload recovery Pin compatible with the C30950 series Light entry angle 130
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C30659-900nm Series Table 1. Electrical Characteristics at TA=22C
Test Conditions: Ambient Temperature, Vamp = 5 Volts, HV = +VR (see Note 1), R L = 50 AC Coupled 900nm Silicon APD Detector Type C30659-900-R8A (Si APD C30817E) Min Typ Max 0.8 0.5 50 275 -1.8 2.2 Note 1 -2.1 2700 3000 82 435 -2.4 C30659-900-R5B (Si APD C30902E) Min Typ Max 0.5 0.2 200 180 -1.8 0.7 Note 1 -2.1 460 400 12 260 -2.4 -
Active Diameter Active Area Bandwidth Range Temperature Coefficient of VR for constant Gain VR for specified responsivity Temperature sensor sensitivity Responsivity At 830nm At 900nm RF (Internal Feedback Resistor) Noise Equivalent Power (NEP) (note 3) f - 100 kHz, f = 1.0 Hz At 830nm At 900nm Output Spectral Noise Voltage: (f = 100 kHz - f-3dB) Output Impedance System Bandwidth, f-3dB Rise Time, tr ( = 830 and 900nm) 10% to 90% points Fall Time, tf ( = 830 and 900nm) 90% to 10% points Recovery time after overload (note 4) Output Voltage Swing (1k load) (note 5) Output Voltage Swing (50 load) (note 5) Output Offset Voltage Positive Supply Current (V+) Negative Supply Current (V-) Notes: 1. 2. 3. 4. 5.
mm mm2 MHz V/C V mV/C kV/W kV/W k
33 40 2 0.7 -1 -
14 12 35 40 50 7 7 3 0.9 0.25 20 10
17 15 45 50 150 1 35 20
33 175 2 0.7 -1 -
35 40 15 40 200 2 2 3 0.9 0.25 20 10
55 65 25 50 150 1 35 20
fW/Hz fW/Hz nV/Hz MHz ns ns ns V V V mA mA
A specific value of VR is supplied with each device. The VR value will be within the specified ranges. If = 0.1 mA, 25C NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity. 0dBm, 250ns pulse. Pulsed operation.
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C30659-1060nm Series Table 2. Electrical Characteristics at TA=22C
Test Conditions: Ambient Temperature, Vamp = 5 Volts, HV = +VR (see Note 1), RL = 50 AC Coupled 1060nm Silicon APD Detector Type C30659-1060-3A (Si APD C30956E) Min Typ Max 3.0 7.1 50 275 -1.8 2.2 Note 1 -2.1 450 280 22 425 -2.4 C30659-1060-R8B (Si APD C30954E) Min Typ Max 0.8 0.5 200 275 -1.8 2.2 Note 1 -2.1 370 200 12 425 -2.4 -
Active Diameter Active Area Bandwidth Range Temperature Coefficient of VR for constant Gain VR for specified responsivity Temperature sensor sensitivity Responsivity At 900nm At 1060nm RF (Internal Feedback Resistor) Noise Equivalent Power (NEP) (note 3) f - 100 kHz, f = 1.0 Hz At 900nm At 1060nm Output Spectral Voltage: (f = 100 kHz - f-3dB) Output Impedance System Bandwidth, f-3dB Rise Time, tr ( = 900 and 1060nm) 10% to 90% points Fall Time, tf ( = 830 and 900nm) 90% to 10% points Recovery time after overload (note 4) Output Voltage Swing (1k load) (note 5) Output Voltage Swing (50 load) (note 5) Output Offset Voltage Positive Supply Current (V+) Negative Supply Current (V-) Notes: 1. 2. 3. 4. 5.
mm mm2 MHz V/C V mV/C kV/W kV/W k
33 40 2 0.7 -1 -
55 90 25 40 50 7 7 3 0.9 0.25 20 10
80 125 35 50 150 1 35 20
33 175 2 0.7 -1 -
55 100 20 40 200 2 2 3 0.9 0.25 20 10
80 150 30 50 150 1 35 20
fW/Hz fW/Hz nV/Hz MHz ns ns ns V V V mA mA
A specific value of VR is supplied with each device. The VR value will be within the specified ranges. If = 0.1 mA, 25C NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity. 0dBm, 250ns pulse. Pulsed operation.
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C30659-1550nm Series Table 3. Electrical Characteristics at TA=22C
Test Conditions: Ambient Temperature, Vamp = 5 Volts, HV = +VR (see Note 1), RL = 50 AC Coupled 1550nm InGaAs APD Detector Type C30659-1550-R2A (InGaAs APD C30662E) Min Typ Max 0.2 0.03 50 40 -1.8 0.2 Note 1 -2.1 300 340 68 70 -2.4 C30659-1550-R08B (InGaAs APD C30645E) Min Typ Max 0.08 0.005 200 40 -1.8 0.2 Note 1 -2.1 80 90 18 70 -2.4 -
Active Diameter Active Area Bandwidth Range Temperature Coefficient of VR for constant Gain VR for specified responsivity Temperature sensor sensitivity Responsivity At 1300nm At 1550nm RF (Internal Feedback Resistor) Noise Equivalent Power (NEP) (note 3) f - 100 kHz, f = 1.0 Hz At 1300nm At 1550nm Output Spectral Voltage: (f = 100 kHz - f-3dB) Output Impedance System Bandwidth, f-3dB Rise Time, tr ( = 900 and 1060nm) 10% to 90% points Fall Time, tf ( = 830 and 900nm) 90% to 10% points Recovery time after overload (note 4) Output Voltage Swing (1k load) (note 5) Output Voltage Swing (50 load) (note 5) Output Offset Voltage Positive Supply Current (V+) Negative Supply Current (V-) Notes: 1. 2. 3. 4. 5.
mm mm2 MHz V/C V mV/C kV/W kV/W k
33 40 2 0.7 -1 -
150 130 45 40 50 7 7 3 0.9 -0.3 20 10
180 160 55 50 150 1 35 20
33 175 2 0.7 -1 -
250 220 20 40 200 2 2 3 0.9 -0.3 20 10
375 330 30 50 150 1 35 20
fW/Hz fW/Hz nV/Hz MHz ns ns ns V V V mA mA
A specific value of VR is supplied with each device. The VR value will be within the specified ranges. If = 0.1 mA, 25C NEPmax is the Maximum Output Spectral Noise Voltage divided by the typical Responsivity. 0dBm, 250ns pulse. Pulsed operation.
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C30659-900-1060-1550nm Series Figure 1. C30659 Series Block Diagram
10k +HV (4) 10n T8_Anode (8) D1N914 T8_Cathode (9) D. 7V +yp Ground (6) (10) V- (3) 10n Photodiode V+ (12) RF 2.2k 33 OUT (1)
Figure 2. Spectral Responsivity
C30659-900-R8A
C30659-900-R5B
C30659-1060-3A
C30659-1060-R8B
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C30659-900-1060-1550nm Series Figure 2. Spectral Responsivity, continued
C30659-1550-R2A
C30659-1550-R08B
Figure 3. Responsivity
C30659-900-R8A
C30659-900-R5B
C30659-1060-3A
C30659-1060-R8B
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C30659-900-1060-1550nm Series Figure 3. Responsivity, continued
C30659-1550-R2A
C30659-1550-R08B
Figure 4. Typical Response / Noise Curves 50 MHz Receivers Noise Frequency
200 MHz Receivers Noise Frequency
Output voltage noise normalization is calculated using the following formula:
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C30659-900-1060-1550nm Series Table 4. Absolute - Maximum Ratings, Limiting Values
C30659-900 (Si) Min Typ Max Photodiode Bias Voltage: At TA = +70C At TA = - 40C Incident Radiant Flux average peak Case Temperature: Storage, Tstg Operating, TA Preamplifier Voltage: -50 -40 -4.5 600 300 0.11 502 100 70 -5.5 C30659-1060 (Si) Min Typ Max -50 -40 -4.5 600 300 0.11 502 100 70 -5.5 C30659-1550 (InGaAs) Min Typ Max -50 -40 -4.5 100 50 21 502 100 70 -5.5 V V mW mW C C V
M
Notes: 1. Based on 0.5W electrical power on high voltage supply. 2. Test with pulse width of 50 ns.
Figure 5. Mechanical Characteristics
PIN CONNECTIONS 1: 2: 3: 4: 5: 6: 7: 8: 9: 10: 11: 12: Signal Output No Connection -Vcc Negative Amplifier Bias Positive high voltage No Connection Case Ground No Connection Temp. Sensing Diode - Anode Temp. Sensing Diode - Cathode Ground, DC returns No Connection +Vcc Positive Amplifier Bias
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C30659-900-1060-1550nm Series Figure 6. Optical Geometry
Model C30659-900-R8A C30659-900-R5B C30659-1060-3A C30659-1060-R8B C30659-1550-R2A C30659-1550-R08B
Detector C30817E C30902E C30956E C30954E C30662E C30645E
S1 (mm) 0.80 0.50 3.00 0.80 0.20 0.08
S2 (mm) 11 11 11 11 11 11
d1 (mm) 1.4 1.4 1.3 1.3 1.5 1.5
(deg)
70 70 65 70 70 70
Table 5. Ordering Guide
Model C30659-900-R8A C30659-900-R5B C30659-1060-3A C30659-1060-R8B C30659-1550-R2A C30659-1550-R08B Description 50 MHz, 900nm, 0.8mm Active Region Diameter 200 MHz, 900nm, 0.5mm Active Region Diameter 50 MHz, 1060nm, 3mm Active Region Diameter 200 MHz, 1060nm, 0.8mm Active Region Diameter 50 MHz, 1550nm, 0.2mm Active Region Diameter 200 MHz, 1550nm, 0.08mm Active Region Diameter
Or dering Information
While the information in this data sheet is intended to describe the form, fit and function for this product, PerkinElmer reserves the right to make changes without notice. For more information e-mail us at opto@perkinelmer.com or visit our web site at www.optoelectronics.perkinelmer.com. All values are nominal; specifications subject to change without notice.
PerkinElmer Canada Inc. 16800 Trans Canada Highway Kirkland, Quebec, H9H 5G7 Canada Phone: (514) 683-2200 Fax: (514) 693-2210 PerkinElmer GmbH & Co. KG Wenzel-Jaksch-Str.31 65199 Wiesbaden Phone: +49 611 492 247 Fax: +49 611 492 170 PerkinElmer Singapore Pte Ltd. 47 Ayer Rajah Crescent #06-12 Singapore 139947 Phone: +65 6775 2022 Fax: +65 6775 1008 Optoelectronics Headquarters PerkinElmer Optoelectronics 44370 Christy Street Fremont, CA 94538-3180 Phone: (510) 979-6500 (800) 775-6786 Fax: (510) 687-1140
(c)2004 PerkinElmer Inc. All rights reserved.
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